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Solving Customer Problems with CVD Diamond Technology
Founded in 1984, Crystallume pioneered the development and application of Chemical Vapor Deposition (CVD) diamond technology. Since then, Crystallume's coating experts have become specialists at solving customer problems with diamond technology.
Diamond Helps Improve Product Performance
Diamond technology isn't new. In the late 1950s, Russian scientists first suggested the idea that diamond could be synthesized by CVD techniques under low pressure. Product designers were interested but, initially, it was viewed as an exotic and expensive solution. Today, with advancements in technology, customers consider CVD diamond to be a viable and important solution for many cutting tool and hard coating applications. In defense, manufacturing, medicine, computing, and many other areas – from components to systems – diamond helps improve product performance.
Benefits of Diamond
- Highest degree of hardness of any material – the lowest coefficient of friction.
- Highest thermal conductivity – the lowest chemical reactivity.
- Highest tensile and compressive strength – broadest range of optical transmissivity.
Pure Diamond – Grown from Methane Gas
The DCC® (Diamond Coated Carbide) technology developed by Crystallume in 1992 produces continuous diamond coating with all the extreme chemical and physical properties of natural and high-pressure high temperature (HPHT) synthetic diamond. It is essentially pure diamond that is grown from methane gas. This diamond coating of intergrown diamond microcrystallites with no binder is deposited by proprietary chemical vapor depository technology. It is superior to other alternative coatings like DLC, PCD and Plated Diamond.Properties of Crystallume CVD Diamond Compared
Comparison of Crystallume CVD Diamond with Current Alternative Materials| Property | Crystallume CVD Diamond | Alternative |
| Thermal Conductivity (w/cm-°C)@25°C | 22 | Copper 4 |
| Hardness (kg/mm2) | 9000 | CBN 4500 |
| Optical Transmissivity | 225 nm to far IR | Sapphire |
| Band Gap (eV) | 5.4 | GaAs 1.43 |
| Coefficient of Friction | 0.05-0.7 | Teflon®0.05 |
| Thermal Expansion (ppm) | 2 | Si 2.6 |
| Electrical Resistivity (ohm-cm) | 1015 (<10-3doped) | AI203 1015 |
