This paper by, F. N. Faili, C. Engdahl and E. Francis, presents an updated overview of the latest development in hot filament assisted CVD diamond growth and diamond integration with electronic materials. In this investigation, we study the successful demonstration of GaN on diamond and review and compare the results with that of silicon on diamond (SOD). The effects of process conditions on the characteristics such as stress and thermal conductivity are described. The as-deposited diamond films were characterised by stress and morphology. The GaN on diamond stack were evaluated optically and electrically. A steady-state technique was used to measure the thermal conductivity of the deposited and free standing diamond and the GaN/Diamond layers.
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